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IRFZ48RSPBF irfz48rlpbf hexfet ? power mosfet 08/24/04 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 50* i d @ t c = 100c continuous drain current, v gs @ 10v 50* a i dm pulsed drain current 290 p d @t c = 25c power dissipation 190 w linear derating factor 1.3 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 100 mj dv/dt peak diode recovery dv/dt 4.5 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 0.8 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance www.irf.com 1 v dss = 60v r ds(on) = 0.018 ? i d = 50*a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. advanced process technology dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated drop in replacement of the irfz48 for linear/audio applications lead-free description d 2 pak irfz48rs to-262 irfz44rl pd - 95761
irfz48rs/lpbf 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 2.0 v t j = 25c, i s = 72a, v gs = 0v t rr reverse recovery time ??? 120 180 ns t j = 25c, i f = 72a q rr reverse recovery charge ??? 0.50 0.80 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 50* 290 v dd = 25v, starting t j = 25c, l = 22h r g = 25 ? , i as = 72a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 72a di/d 200a/s, v dd v (br)dss , t j 175c pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.060 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.018 ? v gs = 10v, i d = 43a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 27 ??? ??? s v ds = 25v, i d = 43a ??? ??? 25 a v ds = 60v, v gs = 0v ??? ??? 250 v ds = 48v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 110 i d = 72a q gs gate-to-source charge ??? ??? 29 nc v ds = 48v q gd gate-to-drain ("miller") charge ??? ??? 36 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 8.1 ??? v dd = 30v t r rise time ??? 250 ??? i d = 72a t d(off) turn-off delay time ??? 210 ??? r g = 9.1 ? t f fall time ??? 250 ??? r d = 0.34 ? , see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 2400 ??? v gs = 0v c oss output capacitance ??? 1300 ??? v ds = 25v c rss reverse transfer capacitance ??? 190 ??? pf ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current * current limited by the package, (die current = 72a)
irfz48rs/lpbf www.irf.com 3

-60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 72a
irfz48rs/lpbf 4 www.irf.com

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$ 1 10 100 1000 0.1 1 10 100 100 0 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
irfz48rs/lpbf www.irf.com 5 "#

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0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irfz48rs/lpbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !
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irfz48rs/lpbf www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - /'0' 1
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irfz48rs/lpbf 8 www.irf.com

dimensions are shown in millimeters (inches) note: "p" in as s embly line pos ition indicates "l ead-f ree" f 530s this is an irf530s wit h lot code 8024 as s e mble d on ww 02, 2000 in the assembly line "l" assembly lot code international rectifier logo part numbe r dat e code year 0 = 2000 we e k 02 line l f530s a = assembly site code week 02 p = de signat e s lead-f ree product (optional) rectifier international logo lot code as s e mb l y ye ar 0 = 2000 dat e code part number
irfz48rs/lpbf www.irf.com 9 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) as s e mb l y lot code rectifier int ernat ional as s e mb le d on ww 19, 1997 note: "p" in ass embly line pos i ti on i ndicates "l ead- f ree" in the assembly line "c" logo t his is an ir l3103l l ot code 1789 example: line c date code week 19 ye ar 7 = 1997 part number part number logo lot code assembly int ernational rectifier product (optional) p = designat es lead-f ree a = assembly site code we e k 19 ye ar 7 = 1997 date code or
irfz48rs/lpbf 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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